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The IGBT process is the manufacturing process used to produce IGBTs.The IGBT process typically involves the following steps: Epitaxial Growth: A layer of silicon is grown on top of a silicon wafer using a chemical vapor deposition process. Ion Implantation: Impurities such as boron and phosphorus are implanted into the silicon to create p-type and n-type regions. Oxidation: A layer of silicon dioxide is grown on top of the silicon to act as an insulator. Photo-lithography: A layer of photoresist is applied to the surface of the silicon dioxide layer, and a mask is used to selectively expose the photoresist to ultraviolet light. The exposed areas are then removed, leaving behind a pattern on the silicon dioxide layer. Etching: The exposed areas of the silicon dioxide layer are etched away using an etching solution, leaving behind the pattern on the silicon dioxide layer. Diffusion: Impurities such as boron and phosphorus are diffused into the exposed areas of the silicon, creating p-typ